Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors
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چکیده
منابع مشابه
Passivated AlGaN / GaN High Electron Mobility Transistors
AlGaN/GaN high electron mobility transistors (HEMTs) passivated with LPCVD SiyNz and AlxSiyNz were fabricated side-by-side, and their performance compared in DC, small-signal, and large-signal test environments. AlxSiyNz passivated devices measured a reduced dependence of source resistance with drain current density, 1.5 x the breakdown voltage, and an increased microwave output power and power...
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iii List of publications v Notations and abbreviations vii
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ژورنال
عنوان ژورنال: Micromachines
سال: 2020
ISSN: 2072-666X
DOI: 10.3390/mi12010007